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5032mm溫補(bǔ)晶振X1G005231002300用于無線模塊應(yīng)用
晶振在電子信息產(chǎn)業(yè)中的應(yīng)用非常普遍，晶振被應(yīng)用于包括網(wǎng)絡(luò)設(shè)備、消費(fèi)電子、移動(dòng)通訊、可穿戴、汽車電子等等領(lǐng)域
愛普生晶振TG5032CGN，是一款超高穩(wěn)定性溫補(bǔ)晶體振蕩器，支持CMOS輸出電平，小體積尺寸5.0x3.2mm有源晶振，10腳貼片晶振，電源電壓:2.375V至3.63V，頻率范圍:10MHz至40MHz，具有小尺寸，輕薄型，低抖動(dòng)，低功耗，低相位噪聲，低損耗，低耗能，高穩(wěn)定性等特點(diǎn)。該款有源晶體振蕩器，可以在G：-40℃至+85℃的溫度內(nèi)穩(wěn)定工作，無鉛，符合歐盟RoHS指令，被廣泛應(yīng)用于小型基站，Stratum3，SyncE，IEEE1588，網(wǎng)絡(luò)系統(tǒng)，車載電子，無線模塊，小型便捷式設(shè)備等。
5032mm溫補(bǔ)晶振X1G005231002300用于無線模塊應(yīng)用
| 產(chǎn)品編碼 |
                                                                                                                                                                     型號(hào)
|
         頻率
|
         貼片晶振
|
         輸出波
|
         電源電壓
|
       精度
|
 工作溫度
|
                                                                                                                                                                                                X1G005231000400
|
TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231000500 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231000900 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231001000 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231001100 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231001200 | TG5032CGN | 12.800000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231001300 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231001500 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231001600 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231001700 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231001900 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231002000 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231002300 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231002500 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231002600 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231002900 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231003000 | TG5032CGN | 38.880000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231003100 | TG5032CGN | 38.880000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231003200 | TG5032CGN | 19.200000MHz | 5.00x3.20x1.45mm | CMOS | 2.700 to 3.000 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231003300 | TG5032CGN | 19.200000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231003400 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231003500 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231003600 | TG5032CGN | 19.440000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231003700 | TG5032CGN | 30.720000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231003900 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231004100 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231004200 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231004300 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231004400 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231004600 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231004700 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
| X1G005231004800 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 2.375 to 2.625 V | +/-1.0 ppm | -40 to ++85 °C |
5032mm溫補(bǔ)晶振X1G005231002300用于無線模塊應(yīng)用
現(xiàn)代電子技術(shù)日新月異的發(fā)展,使得石英晶體振蕩器廣泛應(yīng)用于現(xiàn)代通信,導(dǎo)航,測量等領(lǐng)域的電子設(shè)備中;工程實(shí)際應(yīng)用中許多設(shè)備都工作在溫度范圍變化較大的環(huán)境中,由于石英晶體諧振器自身特殊的物理特性,溫度的變化會(huì)導(dǎo)致晶體振蕩器的頻率發(fā)生偏移.此時(shí)晶體振蕩器就不能為設(shè)備提供穩(wěn)定時(shí)鐘頻率,導(dǎo)致工作異常,而經(jīng)過溫度補(bǔ)償?shù)?a href="http://www.jftz888.com/OSCillator.html" title="石英晶體振蕩器" target="_blank">石英晶體振蕩器彌補(bǔ)了這一缺陷,從而其應(yīng)用更加廣泛.
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